An Effect of <TEX>$O_2/Ar$</TEX> Ratio on the Characteristics of RF Magnetron Sputtered <TEX>$BaTiO_3$</TEX> Thin Film

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J. Korean Ceram. Soc. > Volume 31(8); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(8): 886.

RF Magnetron Sputtering법으로 $BaTiO_3$ 박막 증착시 $O_2/Ar$비가 박막의 특성에 미치는 영향

안재민, 최덕균, 김영호¹

한양대학교 무기재료공학과
¹한양대학교 재료공학과

An Effect of $O_2/Ar$ Ratio on the Characteristics of RF Magnetron Sputtered $BaTiO_3$ Thin Film

ABSTRACT

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.