Effects of Ta Doping in Sputter-deposited PZT Thin Films

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J. Korean Ceram. Soc. > Volume 31(8); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(8): 920.

스퍼터링에 의해 제도된 PZT 박막에 있어서 Ta 첨가 효과

길덕신, 주재현, 주승기

서울대학교 금속공학과

Effects of Ta Doping in Sputter-deposited PZT Thin Films

ABSTRACT

Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${mu}{textrm}{m}$ compared with that of 5 ${mu}{textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$times$10-8 A/$textrm{cm}^2$ and the charge storge density as large as 25.8$mu$C/$textrm{cm}^2$ was obtained.