Highly Oriented Textured Diamond Film on Si Substrate

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J. Korean Ceram. Soc. > Volume 31(4); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(4): 457.

Si 기판과 일정방향관계를 갖는 근사단결정 다이아몬드 박막 합성

백영준, 은광용

한국과학기술연구원 세라믹스연구부

Highly Oriented Textured Diamond Film on Si Substrate

ABSTRACT

The growth condition of highly oriented textured diamond film on a (100) Si substrate was investigated as a function of texture orientation. The growth process consisted of biased enhanced nucleation (BEN) and texture growth. The substrate was under the plasma of 6% CH4-94% H2 with negative bias of 200V during the BEN which grounded during the texture growth. The texture orintation changed from <100> to <110> by increasing substrate temperature. The nearly perfect match between textured diamond grains and the Si substrate could be obtained under the condition of <100> texture. The degree of tilt mismatch increased with the increase of deviation of texture orientation from <100>. The degree of twist mismatch appeared to increase abruptly beyond the critical deviation of texture orientation from <100> because the nuclei having the same orientation as the substrate were no more preferred grains for texture formation.