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J. Korean Ceram. Soc. > Volume 31(1); 1994 > Article
Journal of the Korean Ceramic Society 1994;31(1): 74.
실리콘의 이중증착에 의한 산화막 신뢰성 향상
박진성, 양권승
조선대학교 재료공학과
Reliability Improvement of Thin Oxide by Double Deposition of Silicon
Degradation of thin oxide by doped poly-Si and its improvement were studied. The gate oxide can be degraded by phosphorous in poly-Si doped POCl3. The degradation is increased with the decrement of sheet resistance and poly-Si thickness. Oxide failures of amorphous-Si are higher than those of poly-Si. In-situ double deposition of amorphous-Si, 54$0^{circ}C$/30 nm, and poly-Si, 6$25^{circ}C$/220 nm, forms the mismatch structure of grain boundary between amorphous-Si and poly-Si, and suppresses the excess phosphorous on oxide surface by the mismatch structure. The control of phosphorous through grain boundary improves the oxide reliability.
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