| 졸-겔법에 의한 $Nb_2O_5$ 유전박막의 형성 및 박막의 결정상과 유전특성의 분석 |
| 조남희, 강희복, 이전국1, 김윤호 |
한국과학기술연구원 재료연구단 유전체세라믹스연구실
1한국과학기술연구원 재료연구단 광전세라믹스연구실 |
| Formation of $Nb_2O_5$ Thin Films by Sol-Gel Technique and Analysis of Their Crystalline Phases and Dielectric Characteristics |
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| ABSTRACT |
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Sol-gel spin-coating technique was used to produce Nb2O5 thin films on silicon substrates from Nb(OC2H5)5 precursor. The films were heat-treated at temperatures between $600^{circ}C$ and 100$0^{circ}C$ in oxygen atmosphere and their crystalline phases, chemical states, and dielectric characteristics were investigated by X-ray diffractometry (XRD), Auger electron spectroscopy (AES), and C-V measurements, respectively. After 1 hour heat-treatment at 80$0^{circ}C$, T-type Nb2O5 was formed, and its chemical composition was homogeneous with no appreciable SiO2 oxide at interfaces between the films and substrates. The films heat-treated at temperatures between $600^{circ}C$ and 80$0^{circ}C$ exhibit dielectric constant of less than 20 while the films heat treated at 100$0^{circ}C$ show dielectric constant of 28. |
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