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Journal of the Korean Ceramic Society 1993;30(1): 46. |
| MTS의 열분해를 이용한 $beta$-SiC의 화학증착 및 Excess C 공급원의 영향 |
| 최병진, 박병옥1, 김대룡 |
경북대학교 공과대학 금속공학과
1경북대학교 공과대학 무기재료공학과 |
| Chemical Vapor Deposition of $beta$-SiC by Pyrolysis of MTS and Effect of Excess C Sources |
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| ABSTRACT |
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$beta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{circ}C$, regardless of the total flow rate and MTS concentration, whereas $beta$-SiC single phase was deposited at 150$0^{circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $beta$-SiC single phase could be deposited even at temperature as low as 110$0^{circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low ( |
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