Characteristics of Gate Electrode for WSi2/CVD-Si/SiO2

,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 30(1); 1993 > Article

Journal of the Korean Ceramic Society 1993;30(1): 55.

WSi2/CVD-Si/SiO2 구조의 게이트 전극 특성

박진성, 정동진¹, 이우성¹, 이예승¹, 문환구¹, 김영남¹, 손민영¹, 이현규, 강성철¹

조선대학교 재료공학과
¹삼성전자(주) 반도체부문 기반기술센터

Characteristics of Gate Electrode for WSi2/CVD-Si/SiO2

ABSTRACT

In the WSi2/CVD-Si/SiO2 polycide structure, electrode resistance and its property were studied as a function of deposition temperature and thickness of CVD-Si, diffusion condition of POCl3, and WSi2 being deposited or not. Resistivity of poly-Si is decreased with increment of thickness in the case of POCl3 diffusion of low sheet resistance, but it is increased in the case of high sheet resistance. The resistivity of amorphous-Si is generally lower than that of poly-Si. Initial sheet resistance of poly-Si/WSi2 gate electrode is affected by the thickness and resistance of poly-Si layer, but final resistance after anneal, 900$^{circ}C$/30min/N2, is only determined by WSi2 layer. Flourine diffuses into SiO2, but tungsten does not. In spite of out-diffusion of phosphorus into WSi2 layer, the sheet resistance is not changed.