The Effect of Dislocation Pipe Diffusion on Electro-Migration-Induced Breakdown in an FCC Structure

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J. Korean Ceram. Soc. > Volume 28(11); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(11): 878.

면심입방구조에서 Electro-Migration-Induced Breakdown에 대한 전위파이프 확산의 영향

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아리조나주립대학 재료공학과 템피, 아리조나 85287

The Effect of Dislocation Pipe Diffusion on Electro-Migration-Induced Breakdown in an FCC Structure

ABSTRACT

The mobility and diffusivity in an edge dislocation in an FCC crystal formed by the removal of one half of a (100) plane were evaluated in an applied field by analyzing a vacancy tight binding model using Stark's matrix technique. A model of an edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge of the extrac half plane of ions was considered. The model considered a tight binding approximation of the vacancy to the compressed region of the core and carried the calculation to the limit of an infinite length of dislocation. The diffusivity and the ratio of mobility to diffusivity were found to increase without bounds in the limit where the correlation factor becomes zero. In contrast, as the correlation factor became unity, the diffusivity became zero and the ratio of mobility to diffusivity became unity associated with the uncorrelated limit of 1/kT. This implied that the phenomenon was not unique to the crystal structure but was unique to edge dislocations with vacancy tight binding.