Deposition of Diamond Thin Film Prepared by Hot-filament Chemical Vapor Deposition

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J. Korean Ceram. Soc. > Volume 28(10); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(10): 777.

Hot-filament법에 의한 Diamond 박막증착

윤석근, 한상목, 소명기

강원대학교 재료공학과

Deposition of Diamond Thin Film Prepared by Hot-filament Chemical Vapor Deposition

ABSTRACT

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{circ}C$, the substrate temperature of 77$0^{circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${mu}{textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.