Preparation and Properties of ZnO Thin Films by Metal-Organic Chemical Vapor Deposition Using Diethylzinc Source

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J. Korean Ceram. Soc. > Volume 28(8); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(8): 585.

Diethylzinc를 Source로 사용하는 화학증착법(MOCVD)에 의한 ZnO 박막의 제조 및 물성에 관한 연구

김경준, 김광호

부산대학교 무기재료공학과

Preparation and Properties of ZnO Thin Films by Metal-Organic Chemical Vapor Deposition Using Diethylzinc Source

ABSTRACT

ZnO films were deposited onto Corning glass 7059 substrate in the temperature range from $200^{circ}C$ to $450^{circ}C$ by chemical vapor deposition technique using the hydrolysis of Diet ylzinc (DEZ). As the deposition temperature increased from $200^{circ}C$ to $350^{circ}C$, the deposition rate increased with the apparent activation energy of ∼23kJ/mole. Further increase of the deposition temperature above $400^{circ}C$, however, resulted in a reduction of the rate. It was found that ZnO film grew with a strong C-axis preferred orientation at the temperature of $400^{circ}C$. As the deposition temperature increased, the film resistivity decreased down to ∼0.2 $Omega$cm at $450^{circ}C$. The electrical resistivity was governed more likely by electron concentration rather than by electron mobility. Average optical transmission of the films in the optical wavelength range of 400 nm to 900 nm was over 90% and the optical energy band gap of 3.28∼3.32 eV was obtained from the direct transition.