PTCR Effects of Semiconducting (Ba1-xPbx)TiO3 Ceramics with 0.5 mol% Pb5Ge3O11

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J. Korean Ceram. Soc. > Volume 28(7); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(7): 525.

0.5 mol% Pb5Ge3O11가 첨가된 반도성 (Ba1-xPbx)TiO3 세라믹스의 PTCR 효과

윤상옥, 정형진¹, 윤기현²

강릉대학교 재료공학과
¹한국과학기술연구원 세라믹스부
²연세대학교 요업공학과

PTCR Effects of Semiconducting (Ba1-xPbx)TiO3 Ceramics with 0.5 mol% Pb5Ge3O11

ABSTRACT

The effects of 0.15mol% Y2O3 doped semiconducting (Ba1-xPbx)TiO3 ceramics with 0.5 mol% Pb5Ge3O11 as sintering additives have been investigated as function of Pb contents (from 0.05 mol to 0.3 mol) and sintering temperatures (from 1050$^{circ}C$ to 1200$^{circ}C$). As the Pb content increases in the (Ba1-xPbx)TiO3 system, the size and resistance of the grain increase but the capacitance of the grain boundary decreases due to the formation of liquid phase during the sintering. And with increasing the sintering temperatures, the resistance of the grain decreases but the capacitance of the grain boundary increases. The PTCR effects decrease with increasing the Pb content and the sintering temperature.