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J. Korean Ceram. Soc. > Volume 28(2); 1991 > Article
Journal of the Korean Ceramic Society 1991;28(2): 141.
LEC GaAs의 점결함에 대한 Melt 조성의 영향
고경현, 안재환
아주대학교 재료공학과
The Effect of Melt Stoichiometry on the Native Defects of LEC GaAs
The effects of the melt stoichiometry on the concentration of electron and hole traps formed by intrinsic defects of LEC GaAs were studied employing DLTS measurement technique. The concentration of EL2 were varied from $10^{16}cm^{-3}$ to $10^{11}cm^{-3}$ when the arsenic atomic fraction in the melt ([As]/{[As]+[Ga]} varied from 0.5 to 0.42. Specifically, when the fraction falls below 0.46, the 띠2 concentration start to decrease sharply. For 68meV and 77/200meV traps, their concentration increase inversely with the arsenic atomic fraction and have the values in the range of TEX>$10^{15}cm^{-3}$ and $10^{14}cm^{-3}$, respectively. It is, therefore, concluded that these hole traps originated from the intrinsic acceptor defects including $GS^{AS}$.
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