Electrical Conductivity and Defect Structure in <TEX>$SrTiO_3$</TEX>Thick Film

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J. Korean Ceram. Soc. > Volume 27(7); 1990 > Article

Journal of the Korean Ceramic Society 1990;27(7): 841.

$SrTiO_3$ 후막의 전기전도도 및 결함구조

김영호, 김호기

한국과학기술원 재료공학과

Electrical Conductivity and Defect Structure in $SrTiO_3$Thick Film

ABSTRACT

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.