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J. Korean Ceram. Soc. > Volume 27(5); 1990 > Article
Journal of the Korean Ceramic Society 1990;27(5): 698.
Czochralski법에 의한 $Bi_{12}SiO_{20}$ 단결정 성장
정광철, 오근호
한양대학교 무기재료공학과
Czochralski Growth of $Bi_{12}SiO_{20}$ single Crystals
The necessary conditions for the growth of high quality Bi12SiO20 single crystals by the Czochralski method have been determined. The interface of melt and crystal was transformed convex to concave above 7 rpm. For growth <001> and <111> directions, facet morphology exhibited 4-fold and 6-fold symmetry. When the crystal of <001> growth direction was broadened, minor facet {110} was developed outstandingly.
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