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J. Korean Ceram. Soc. > Volume 27(3); 1990 > Article
Journal of the Korean Ceramic Society 1990;27(3): 401.
다이아몬드 CVD에서 산소혼입이 증착속도 및 결정성에 미치는 영향
서문규, 이지화
서울대학교 공업화학과
Effects of Oxygen Addition on the Growth Rate and Crystallinity in Diamond CVD
Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.
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