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J. Korean Ceram. Soc. > Volume 27(3); 1990 > Article
Journal of the Korean Ceramic Society 1990;27(3): 337.
$RuO_2$계 후막저항체의 미세구조와 전기적성질
구본급, 김호기
한국과학기술원 재료공학과
Microstructure and Electrical Properties of $RuO_2$ System Thick Film Resistors
ABSTRACT
As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{circ}C$ was negative value, and TCR of 80$0^{circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.
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