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J. Korean Ceram. Soc. > Volume 25(5); 1988 > Article
Journal of the Korean Ceramic Society 1988;25(5): 495.
Verneuil법에 의한 Sapphire단결정 성장
주경, 배상열, 최종건, 오근호, 손선기1, 변영재1, 전형탁1
한양대학교 무기재료공학과
Growth of Sapphire Crystals by Verneuil Method
y these parameters. Crystals having good qualities and shape were grown under the conditions that feeding rate, 0.2∼0.5g/min, lowering rate, 10∼20mm/hr ; gas pressure, 3∼4psi ; growth axis was shifted 60 degrees from c axis.
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