The Effects of Deposition Variables on the Chemical Vapor Deposition of SnO2

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J. Korean Ceram. Soc. > Volume 24(6); 1987 > Article

Journal of the Korean Ceramic Society 1987;24(6): 543.

증착변수들이 SnO2 화학증착에 미치는 영향에 관한 연구

김광호, 천성순¹

부산대학교 무기재료공학과
¹한국과학기술원 재료공학과

The Effects of Deposition Variables on the Chemical Vapor Deposition of SnO2

ABSTRACT

The effects of deposition variables on SnO2 CVD were investigated for SnCl4＋O2 reaction at 300∼700$^{circ}C$, Psncl4=1${times}$10-5∼1${times}$10-3 atm, and Po2=5${times}$10-4∼1 atm. A thermodynamic equilibrium study on Sn-Cl-O system has been performed with the computer calculation. The calculation indicates that major species participating the reaction in SnCl4 and not intermediate species, SnCl2. Good uniformity of the film thickness was obtained at the flow rate of 11cm/sec, which resulted from the stable gas flow in our cold wall reactor. The experimental results showed that apparent activation energy of the deposition was about 13.5Kcal/mole below the temperature of 500$^{circ}C$ and the deposition mechanism was controlled by surface reation. The behavior of deposition rate on the reactant partial pressures could be explained with the Langmuri-Hinshelwood mechanism. X-ray study demonstrated that SnO2 film deposited at temperatures above 400$^{circ}C$ were polycrystalline with tetragonal rutile structure and grew with (211) and (301) preferred orientations.