Effect of MoO3 Addition and Their Frequency Characteristics in Nb+5 doped Semiconductive BaTiO3 Ceramics

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J. Korean Ceram. Soc. > Volume 24(1); 1987 > Article

Journal of the Korean Ceramic Society 1987;24(1): 63.

Nb+5첨가된 반도성 BaTiO3세라믹스에서 MoO3의 영향과 주파수 특성

윤상옥, 정형진, 윤기현¹

한국과학기술원 무기재료연구실
¹연세대학교 요업공학과

Effect of MoO3 Addition and Their Frequency Characteristics in Nb+5 doped Semiconductive BaTiO3 Ceramics

ABSTRACT

Effect of MoO3 additiion on the semiconductive BaTiO3 ceramics doped with 0.2 mole% Nb2O5 and their frequency characteristics have been investigated on the view of intergranular barrier layer model through the observation of changes in their electrical properties. The resistivity increases with the increase of MoO3 addition, but the capacitance, the frequency dependence of capacitance and the effect of positive temperature coefficient of resistivity (PTCR) decrease. It is explained by the possible increase in the thickness of potential barrier due to the formation of insulating layer and thus decrease in the degree of energy band bending. Both the PTCR effect and resistivity decrease with the increase of frequency due to the possible elimination of barrier layer at the grain boundary.