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Journal of the Korean Ceramic Society 1985;22(1): 53. |
| $Si-Si_3N_4$ 성형체의 질화반응에 관한연구 |
| 이전국, 김종희 |
| 한국과학기술원 재료공학과 |
| A Study on the Nitridation of $Si-Si_3N_4$ Compacts |
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| ABSTRACT |
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Experiments related to nitriding silicon with addition of $Si_3N_4$ have provided information on the effects of such inclusion on the phase relationships of Reaction Bonded Silicon Nitride. In the current work specimens containing 0-25wt% Si3N4 which have 55.5wt% $alpha$ 4.5wt% $eta$, 40wt% amorphous phase were nitrided for 7-20 hours at 1300-135$0^{circ}C$ The evaluation of nitridation was per-formed by means of $alpha$-and $beta$-phase contents determination in nitrided specimens, In order to observe nitrided region between silicon and silicon nitride scanning electron microscopy was used to study reacted region between silicon and silicon nitride particle. For this purpose semiconductor-grade silicon wafer single crystal was used as a silicon source. The incorporation of small amount of $Si_3N_4$ powder is contributed to enhancing the rate of formation of $alpha$-phase |
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