J. Korean Ceram. Soc. > Volume 18(2); 1981 > Article
 Journal of the Korean Ceramic Society 1981;18(2): 79.
 SiC의 산화반응 기구 최태운, 이홍림 연세대학교 요업공학과 Oxidation Mechanism of SiC ABSTRACT SiC powder was heated in air over the temperature range of 1100-135$0^{circ}C$. $beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $beta$-cristobalite layer was obtained as the following equation: $D=3.84{times}10^{-17}$exp(-14.7/RT)
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