PublisherDOIYearVolumeIssuePageTitleAuthor(s)Link
Journal of the Korean Ceramic Society10.4191/kcers.2018.55.2.082018552108-115Epitaxial Growth of Three-Dimensional ZnO and GaN Light Emitting CrystalsDong Won Yang, Won Il Parkhttp://www.jkcs.or.kr/upload/pdf/kcers-2018-55-2-08.pdf, http://www.jkcs.or.kr/journal/view.php?doi=10.4191/kcers.2018.55.2.08, http://www.jkcs.or.kr/upload/pdf/kcers-2018-55-2-08.pdf
Applied Physics Express10.7567/apex.7.062102201476062102Epitaxial growth of nonpolar ZnO and n-ZnO/i-ZnO/p-GaN heterostructure on Si(001) for ultraviolet light emitting diodesNam T. Nguyen, Sung-Gi Ri, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyowhttp://stacks.iop.org/1882-0786/7/i=6/a=062102/pdf, http://stacks.iop.org/1882-0786/7/i=6/a=062102?key=crossref.2646876950c26cc0733476b3bd16291f, http://stacks.iop.org/1882-0786/7/i=6/a=062102/pdf, http://stacks.iop.org/1882-0786/7/i=6/a=062102/pdf, http://stacks.iop.org/1882-0786/7/i=6/a=062102?key=crossref.2646876950c26cc0733476b3bd16291f
Scientific Reports10.1038/s41598-017-10086-7201771Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowthYang-Seok Yoo, Hyun Gyu Song, Min-Ho Jang, Sang-Won Lee, Yong-Hoon Chohttp://www.nature.com/articles/s41598-017-10086-7.pdf, http://www.nature.com/articles/s41598-017-10086-7, http://www.nature.com/articles/s41598-017-10086-7.pdf
III-Nitride Based Light Emitting Diodes and Applications10.1007/978-981-10-3755-9_4201769-92Epitaxial Growth of GaN on Patterned Sapphire SubstratesKazuyuki Tadatomohttp://link.springer.com/content/pdf/10.1007/978-981-10-3755-9_4
Advanced Materials10.1002/1521-4095(200103)13:5<313::aid-adma313>3.0.co;2-02001135313-317Epitaxial Growth of Thiophene/p-Phenylene Co-oligomers for Highly Polarized Light-Emitting CrystalsH. Yanagi, T. Morikawa, S. Hotta, K. Yasehttps://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F1521-4095(200103)13:5%3C313::AID-ADMA313%3E3.0.CO;2-0, https://onlinelibrary.wiley.com/doi/full/10.1002/1521-4095(200103)13:5%3C313::AID-ADMA313%3E3.0.CO;2-0
Crystals10.3390/cryst100907722020109772Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) SubstratesYibin Yang, Lingxia Zhang, Yu Zhaohttps://www.mdpi.com/2073-4352/10/9/772/pdf
Materials Science Forum10.4028/www.scientific.net/msf.514-516.382006514-51638-42Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial LayersSergio Pereira, M.R. Correia, Eduardo Alveshttps://www.scientific.net/MSF.514-516.38.pdf
Superlattices and Microstructures10.1016/j.spmi.2010.03.0022010476754-761The effect of the post-growth annealing on the electroluminescence properties of -ZnO nanorods/-GaN light emitting diodesN.H. Alvi, M. Willander, O. Nurhttps://api.elsevier.com/content/article/PII:S0749603610000509?httpAccept=text/xml, https://api.elsevier.com/content/article/PII:S0749603610000509?httpAccept=text/plain
Crystals10.3390/cryst801002720188127Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and PolarizationsHan-Youl Ryuhttp://www.mdpi.com/2073-4352/8/1/27/pdf
Applied Physics A10.1007/s00339-019-2397-z20191252Enhancement of light extraction efficiency in the GaN-based light-emitting diodes by selective growth of ZnO nanorodsJi-Yeon Park, Sung-Nam Leehttp://link.springer.com/article/10.1007/s00339-019-2397-z/fulltext.html, http://link.springer.com/content/pdf/10.1007/s00339-019-2397-z.pdf, http://link.springer.com/content/pdf/10.1007/s00339-019-2397-z.pdf