Epitaxial Growth of Three-Dimensional ZnO and GaN Light Emitting Crystals
Journal of the Korean Ceramic Society. 2018;55(2):108-115 
Epitaxial growth of nonpolar ZnO and n-ZnO/i-ZnO/p-GaN heterostructure on Si(001) for ultraviolet light emitting diodes
Applied Physics Express. 2014;7(6):062102
Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
Scientific Reports. 2017;7(1):
Epitaxial Growth of GaN on Patterned Sapphire Substrates
III-Nitride Based Light Emitting Diodes and Applications. 2017;69-92
Epitaxial Growth of Thiophene/p-Phenylene Co-oligomers for Highly Polarized Light-Emitting Crystals
Advanced Materials. 2001;13(5):313-317
Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates
Crystals. 2020;10(9):772
Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers
Materials Science Forum. 2006;514-516:38-42
The effect of the post-growth annealing on the electroluminescence properties of -ZnO nanorods/-GaN light emitting diodes
Superlattices and Microstructures. 2010;47(6):754-761
Enhancement of light extraction efficiency in the GaN-based light-emitting diodes by selective growth of ZnO nanorods
Applied Physics A. 2019;125(2):
Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations
Crystals. 2018;8(1):27