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The Properties and Uniformity Change of Amorphous SiC:H Film Deposited using Remote PECVD System with Various Deposition Conditions |
Sung-Hyuk Cho, Yoo-Youl Choi, Doo-Jin Choi |
J. Korean Ceram. Soc.. 2010;47(3):262 DOI: https://doi.org/10.4191/kcers.2010.47.3.262 |
Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems Properties of amorphous silicon carbide film deposited by PECVD on glass Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature Properties of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2 Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD The Properties of a-SiC:H and a-SiGe:H Films Deposited by 55 kHz PECVD Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process Segmented Modeling of Large-Area VHF PECVD Thin-Film Amorphous Silicon Deposition System |
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