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The Properties and Uniformity Change of Amorphous SiC:H Film Deposited using Remote PECVD System with Various Deposition Conditions
Sung-Hyuk Cho, Yoo-Youl Choi, Doo-Jin Choi
J. Korean Ceram. Soc.. 2010;47(3):262    DOI: https://doi.org/10.4191/kcers.2010.47.3.262

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Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique
Current Applied Physics. 2010;10(2):S237-S240   Crossref logo
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Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems
MRS Proceedings. 1986;68:   Crossref logo
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Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems
MRS Proceedings. 1986;68:   Crossref logo
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Properties of amorphous silicon carbide film deposited by PECVD on glass
Materials Chemistry and Physics. 1996;45(1):43-49   Crossref logo
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Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature
Thin Solid Films. 1995;261(1-2):192-201   Crossref logo
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Properties of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2
Chemical Vapor Deposition. 2009;15(1-3):47-52   Crossref logo
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Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD
MRS Proceedings. 1991;219:   Crossref logo
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The Properties of a-SiC:H and a-SiGe:H Films Deposited by 55 kHz PECVD
MRS Proceedings. 1999;557:   Crossref logo
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Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process
Journal of Non-Crystalline Solids. 1989;115(1-3):69-71   Crossref logo
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Segmented Modeling of Large-Area VHF PECVD Thin-Film Amorphous Silicon Deposition System
ECS Meeting Abstracts. 2011;MA2011-02(29):1978-1978   Crossref logo
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