PublisherDOIYearVolumeIssuePageTitleAuthor(s)Link
IEEE Transactions on Nuclear Science10.1109/tns.2012.219162220121-1Growth and Scintillation Properties of Pr-Doped Gd<formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>(Ga,Al)<formula formulatype="inline"><tex Notation="TeX">$_{5}$</tex></formula>O<formula formulatype="inline"> <tex Notation="TeX">$_{12}$</tex></formula> Single CrystalsKei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutumi, Yoshiyuki Usuki, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawahttp://xplorestaging.ieee.org/ielx5/23/4689328/06190737.pdf?arnumber=6190737
IEEE Magnetics Letters10.1109/lmag.2010.2054830201014500104-4500104Low-Gas-Pressure Sputtering of CoPtCr–<formula formulatype="inline"><tex Notation="TeX">$\hbox{SiO}_2$</tex></formula> Granular Films Made by a Sintered Target Without <formula formulatype="inline"><tex Notation="TeX">$\hbox{SiO}_2$</tex></formula> PowderShingo Sasaki, Shin Saito, Migaku Takahashihttp://xplorestaging.ieee.org/ielx5/5165412/5257438/05518470.pdf?arnumber=5518470
IEEE Transactions On Nanotechnology10.1109/tnano.2004.82403320043173-79Comparison of Fe/Al&lt;tex&gt;$_2$&lt;/tex&gt;O&lt;tex&gt;$_3$&lt;/tex&gt;and Fe, Co/Al&lt;tex&gt;$_2$&lt;/tex&gt;O&lt;tex&gt;$_3$&lt;/tex&gt;Catalysts Used for Production of Carbon Nanotubes From Acetylene by CCVDZ. Konya, I. Vesselenyi, K. Lazar, J. Kiss, I. Kiricsihttp://xplorestaging.ieee.org/ielx5/7729/28578/01278272.pdf?arnumber=1278272
IEEE Transactions on Appiled Superconductivity10.1109/tasc.2005.85054020051533864-3867Effect of BaCeO<tex>$_3$</tex>and BaSnO<tex>$_3$</tex>Additives on Microstructural Development and Critical Current Density of Melt Textured YBa<tex>$_2$</tex>Cu<tex>$_3$</tex>O<tex>$_7-x$</tex>O. Jongprateep, F. Dogan, M. Strasik, K.E. McCraryhttp://xplorestaging.ieee.org/ielx5/77/32267/01504859.pdf?arnumber=1504859
IEEE Transactions on Applied Superconductivity10.1109/tasc.2006.86991420061612-8Effect of Mg Doping on the Superconducting Properties of Cu&lt;tex&gt;$_1-x$&lt;/tex&gt;Tl&lt;tex&gt;$_x$&lt;/tex&gt;Ba&lt;tex&gt;$_2$&lt;/tex&gt;Ca&lt;tex&gt;$_3-y$&lt;/tex&gt;Mg&lt;tex&gt;$_y$&lt;/tex&gt;Cu&lt;tex&gt;$_4$&lt;/tex&gt;O&lt;tex&gt;$_12 - delta$&lt;/tex&gt;N.A. Khan, S. Nawazhttp://xplorestaging.ieee.org/ielx5/77/33695/01603602.pdf?arnumber=1603602
IEEE Photonics Technology Letters10.1109/lpt.2008.2005507200820231950-1952High-Performance (Al<formula formulatype="inline"> <tex Notation="TeX">$_{x}$</tex></formula>Ga<formula formulatype="inline"> <tex Notation="TeX">$_{1 - x}$</tex></formula>)<formula formulatype="inline"> <tex Notation="TeX">$_{0.5}$</tex></formula>In<formula formulatype="inline"> <tex Notation="TeX">$_{0.5}$</tex></formula>P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure Yea-Chen Lee, Hao-Chung Kuo, Chia-En Lee, Tien-Chang Lu, Shing-Chung Wanghttp://xplorestaging.ieee.org/ielx5/68/4670989/04663530.pdf?arnumber=4663530
IEEE Electron Device Letters10.1109/led.2004.8265432004255241-243547-GHz&lt;tex&gt;$f_t$&lt;/tex&gt;In&lt;tex&gt;$_0.7$&lt;/tex&gt;Ga&lt;tex&gt;$_0.3$&lt;/tex&gt;As–In&lt;tex&gt;$_0.52$&lt;/tex&gt;Al&lt;tex&gt;$_0.48$&lt;/tex&gt;As HEMTs With Reduced Source and Drain ResistanceK. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, S. Hiyamizuhttp://xplorestaging.ieee.org/ielx5/55/28808/01295094.pdf?arnumber=1295094
IEEE Transactions on Electron Devices10.1109/ted.2004.8412812005522146-150Characteristics of In&lt;tex&gt;$_x$&lt;/tex&gt;Al&lt;tex&gt;$_1-x$&lt;/tex&gt;N–GaN High-Electron Mobility Field-Effect TransistorO. Katz, D. Mistele, B. Meyler, G. Bahir, J. Salzmanhttp://xplorestaging.ieee.org/ielx5/16/30185/01386580.pdf?arnumber=1386580
IEEE Photonics Technology Letters10.1109/lpt.2003.818922200416136-38Light Emission Near 1.3&gt;tex&lt;$mu$&gt;/tex&lt;m Using ITO–Al&gt;tex&lt;$_2$&gt;/tex&lt;O&gt;tex&lt;$_3$&gt;/tex&lt;–Si&gt;tex&lt;$_0.3$&gt;/tex&lt;Ge&gt;tex&lt;$_0.7$&gt;/tex&lt;–Si Tunnel DiodesC.Y. Lin, A. Chin, Y.T. Hou, M.F. Li, S.P. McAlister, D.L. Kwonghttp://xplorestaging.ieee.org/ielx5/68/28099/01255943.pdf?arnumber=1255943
Journal of Microelectromechanical Systems10.1109/jmems.2006.8766542006153465-470Piezoelectric Al<tex>$_0.3$</tex>Ga<tex>$_0.7$</tex>As Longitudinal Mode Bar ResonatorsL. Li, P. Kumar, L. Calhoun, D.L. DeVoehttp://xplorestaging.ieee.org/ielx5/84/34353/01638471.pdf?arnumber=1638471