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The Effect of PVA-Al(III) Complex on Pore Formation and Grain Growth of $UO_2$ Sintered Pellet (II)
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J. Korean Ceram. Soc.. 1999;36(8):783

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Growth and Scintillation Properties of Pr-Doped Gd<formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>(Ga,Al)<formula formulatype="inline"><tex Notation="TeX">$_{5}$</tex></formula>O<formula formulatype="inline"> <tex Notation="TeX">$_{12}$</tex></formula> Single Crystals
IEEE Transactions on Nuclear Science. 2012;1-1   Crossref logo

Low-Gas-Pressure Sputtering of CoPtCr–<formula formulatype="inline"><tex Notation="TeX">$\hbox{SiO}_2$</tex></formula> Granular Films Made by a Sintered Target Without <formula formulatype="inline"><tex Notation="TeX">$\hbox{SiO}_2$</tex></formula> Powder
IEEE Magnetics Letters. 2010;1:4500104-4500104   Crossref logo

Comparison of Fe/Al&lt;tex&gt;$_2$&lt;/tex&gt;O&lt;tex&gt;$_3$&lt;/tex&gt;and Fe, Co/Al&lt;tex&gt;$_2$&lt;/tex&gt;O&lt;tex&gt;$_3$&lt;/tex&gt;Catalysts Used for Production of Carbon Nanotubes From Acetylene by CCVD
IEEE Transactions On Nanotechnology. 2004;3(1):73-79   Crossref logo

Effect of BaCeO<tex>$_3$</tex>and BaSnO<tex>$_3$</tex>Additives on Microstructural Development and Critical Current Density of Melt Textured YBa<tex>$_2$</tex>Cu<tex>$_3$</tex>O<tex>$_7-x$</tex>
IEEE Transactions on Appiled Superconductivity. 2005;15(3):3864-3867   Crossref logo

Effect of Mg Doping on the Superconducting Properties of Cu&lt;tex&gt;$_1-x$&lt;/tex&gt;Tl&lt;tex&gt;$_x$&lt;/tex&gt;Ba&lt;tex&gt;$_2$&lt;/tex&gt;Ca&lt;tex&gt;$_3-y$&lt;/tex&gt;Mg&lt;tex&gt;$_y$&lt;/tex&gt;Cu&lt;tex&gt;$_4$&lt;/tex&gt;O&lt;tex&gt;$_12 - delta$&lt;/tex&gt;
IEEE Transactions on Applied Superconductivity. 2006;16(1):2-8   Crossref logo

High-Performance (Al<formula formulatype="inline"> <tex Notation="TeX">$_{x}$</tex></formula>Ga<formula formulatype="inline"> <tex Notation="TeX">$_{1 - x}$</tex></formula>)<formula formulatype="inline"> <tex Notation="TeX">$_{0.5}$</tex></formula>In<formula formulatype="inline"> <tex Notation="TeX">$_{0.5}$</tex></formula>P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure
IEEE Photonics Technology Letters. 2008;20(23):1950-1952   Crossref logo

547-GHz&lt;tex&gt;$f_t$&lt;/tex&gt;In&lt;tex&gt;$_0.7$&lt;/tex&gt;Ga&lt;tex&gt;$_0.3$&lt;/tex&gt;As–In&lt;tex&gt;$_0.52$&lt;/tex&gt;Al&lt;tex&gt;$_0.48$&lt;/tex&gt;As HEMTs With Reduced Source and Drain Resistance
IEEE Electron Device Letters. 2004;25(5):241-243   Crossref logo

Characteristics of In&lt;tex&gt;$_x$&lt;/tex&gt;Al&lt;tex&gt;$_1-x$&lt;/tex&gt;N–GaN High-Electron Mobility Field-Effect Transistor
IEEE Transactions on Electron Devices. 2005;52(2):146-150   Crossref logo

Light Emission Near 1.3&gt;tex&lt;$mu$&gt;/tex&lt;m Using ITO–Al&gt;tex&lt;$_2$&gt;/tex&lt;O&gt;tex&lt;$_3$&gt;/tex&lt;–Si&gt;tex&lt;$_0.3$&gt;/tex&lt;Ge&gt;tex&lt;$_0.7$&gt;/tex&lt;–Si Tunnel Diodes
IEEE Photonics Technology Letters. 2004;16(1):36-38   Crossref logo

Piezoelectric Al<tex>$_0.3$</tex>Ga<tex>$_0.7$</tex>As Longitudinal Mode Bar Resonators
Journal of Microelectromechanical Systems. 2006;15(3):465-470   Crossref logo

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