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A Study on the Electrical Properties of Al2O3/La2O3/Al2O3 Multi-Stacked Films Using Tunnel Oxide Annealed at Various Temperatures
Hyo-June Kim, Seung-Yong Cha, Doo-Jin Choi
J. Korean Ceram. Soc. 2009;46(4):436
DOI: https://doi.org/10.4191/kcers.2009.46.4.436
      
The Effect of the Heat Treatment of the ZrO2 Buffer Layer and SBT Thin Film on Interfacial Conditions and Ferroelectric Properties of the SrBi2Ta2O9/ZrO2/Si Structure
Young-Hun Oh, Chul-Ho Park, Young-Guk Son
J. Korean Ceram. Soc. 2005;42(9):624
DOI: https://doi.org/10.4191/kcers.2005.42.9.624
      
Microstructure and Electrical Properties of the Pt/Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS) Using the PbO Buffer Layer
Chul-Ho Park, Kyoung-Hwan Song, Young-Guk Son
J. Korean Ceram. Soc. 2005;42(2):104
DOI: https://doi.org/10.4191/kcers.2005.42.2.104
      
Nonvolatile Semiconductor Memories Using BT-Based Ferroelectric Films
Bee-Lyong Yang, Suk-Kyoung Hong
J. Korean Ceram. Soc. 2004;41(4):273
DOI: https://doi.org/10.4191/kcers.2004.41.4.273
      
The Heat Treatment Effect of ZrO2 Buffer Layer on the Electrical Properties of Pt/SrBi2Ta2O9/ZrO2/Si Structure
정우석, 박철호, 손영국
J. Korean Ceram. Soc. 2003;40(1):52
DOI: https://doi.org/10.4191/kcers.2003.40.1.052
         Cited By 1
Effects of Annealing Atmosphere on Crystallization and Electrical Properties in $YMnO_3$ Ferroelectric Thin Films
윤귀영, 김정석, 천채일
J. Korean Ceram. Soc. 2000;37(2):168
      
Characterization of Ferroelectric $SrBi_2Ta_2O_9$ Thin Films Deposited by RF Magnetron Sputtering With Various Annealing Temperatures
박상식, 양철훈, 윤순길, 안준형, 김호기
J. Korean Ceram. Soc. 1997;34(2):202
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