| Defects controlled stress engineering in Al-doped ZnO transparent multilayered thin films |
| Jihye Kang1, Jaeyong Yun1, Yoo-Young Oh1, Sung-Jin Kim3, Masao Kamiko4, Nam-Hoon Kim5, Jung-Hyuk Koh1,2 |
1School of Electrical and Electronics Engineering, ChungAng University, Seoul, Republic of Korea
2Department of Intelligent Energy and Industry, Chung-Ang University, Seoul, Republic of Korea
3College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, Republic of Korea
4Institute of Industrial Science, The University of Tokyo, Tokyo, Japan
5Department of Electrical Engineering, Chosun University, Gwangju, Republic of Korea |
|
|
|
Received: November 14, 2021; Revised: April 8, 2022 Accepted: April 29, 2022. Published online: May 30, 2022. |
|
|
|
| ABSTRACT |
|
This study explores stress engineering in multilayered structures of Al-doped ZnO thin films by controlling defects in them. Al-doped ZnO thin films are examples of transparent conducting oxides. Owing to their high conductivity and transparency, Al-doped ZnO thin films have various promising applications. However, defects and dislocations in thin films can deteriorate their electrical and optical properties. These defects or dislocations can be formed during the thin-film deposition process. Especially, defects can be formed between the layers during the stacking process of the sol–gel method. Therefore, methods to control defects have been designed and simulated to engineer stress in thin films. In this study, layered Al-doped ZnO thin films with different thicknesses were prepared to investigate the interface effects and electron motion in them. |
| Key words:
Multilayered structure · Al-doped ZnO · Laser annealing |
|
|
|
PDF Links 
Full text via DOI
Download Citation 
