| 펄스레이저 공정으로 제조한 Sb가 도핑된 SnO2 박막의 전기적 및 광학적 특성 |
| 장기선, 이정우1, 김중원1, 유상임1 |
삼성 디스플레이 CAE팀
1서울대학교 공과대학 재료공학부 및 신소재공동연구소 |
| Electrical and Optical Properties of Sb-doped SnO2 Thin Films Fabricated by Pulsed Laser Deposition |
| Ki-Sun Jang, Jung-Woo Lee1, Joongwon Kim1, Sang-Im Yoo1 |
| 1Department of Materials Science & Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University |
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| ABSTRACT |
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We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{times}10^{-2}{Omega}{cdot}cm$ at $200^{circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{times}10^{-3}{Omega}{cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${Omega}^{-1}{cdot}cm^{-1}$ at $400^{circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$. |
| Key words:
Electrical properties, Optical materials/properties, Tin/tin compounds, Thin films, Resistivity |
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