| Comparative Study of Nitrogen Incorporated SnO2 Deposited by Sputtering of Sn and SnO2 Targets |
| Youngrae Kim, Sarah Eunkyung Kim1 |
Microsystem Packaging Center, Seoul Technopark
1Graduate School of NID Fusion Technology, Seoul National University of Science and Technology |
|
|
|
|
|
| ABSTRACT |
|
Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target. |
| Key words:
Thin films, Tin compounds, Electrical conductivity, Semiconductors |
|
|
|
PDF Links
Full text via DOI
Download Citation 
