| C3H8-SiCl4-H2 시스템에서 FactSage를 이용한 압력-조성-온도 3차원 상평형도의 응용 |
| 김준우, 김형태, 김경자, 이종흔1, 최균 |
한국세라믹기술원 이천분원
1고려대학교 재료공학과 |
| Application of 3-dimensional phase-diagram using FactSage in C3H8-SiCl4-H2 System |
| Jun-Woo Kim, Hyung-Tae Kim, Kyung-Ja Kim, Jong-Heun Lee1, Kyoon Choi |
Icheon Branch, Korea Institute of Ceramic Engineering and Technology
1Department of Material Science and Engineering, Korea University |
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| ABSTRACT |
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In order to deposit a homogeneous and uniform ${beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide. |
| Key words:
Silicon carbide, CVD, Thermodynamic calculation, Computer simulation |
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