| ZrO2 완충층과 SBT박막을 이용한 MFIS 구조의 제조 및 전기적 특성 |
| 김민철, 정우석, 손영국 |
| 부산대학교 무기재료공학과 |
| Preparation of ZrO2 and SBT Thin Films for MFIS Structure and Electrical Properties |
| Min-Cheol Kim, Woo-Suk Jung, Young-Guk Son |
| Department of Inorganic Materials and Engineering, Pusan National University |
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| ABSTRACT |
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The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage. |
| Key words:
Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure, ZrO$_2$, SrBi$_2Ta_2O_9(SBT)$, Buffer layer |
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