The Thermoelectric Properties of p-type SiGe Alloys Prepared by RF Induction Furnace

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J. Korean Ceram. Soc. > Volume 37(5); 2000 > Article

Journal of the Korean Ceramic Society 2000;37(5): 432.

고주파 진공유도로로 제작한 p형 SiGe 합금의 열전변환물성

이용주, 배철훈

인천대학교 공과대학 재료공학과

The Thermoelectric Properties of p-type SiGe Alloys Prepared by RF Induction Furnace

ABSTRACT

Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.

Key words: Thermoelectirc material, Seebeck coefficient, Electrical conductivity, Power factor, SiGe alloy