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Journal of the Korean Ceramic Society 1998;35(8): 827. |
Sputter Seeding을 이용한 CVD Cu 박막의 비선택적 증착 및 기판의 영향 |
박종만, 김석, 최두진1, 고대홍 |
연세대학교 세라믹공학과 1연세대학교 세라믹공학 |
The Blanket Deposition and the Sputter Seeding Effects on Substrates of the Chemically Vapor Deposited Cu Films |
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ABSTRACT |
Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${AA}$ and 160${AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{circ}C$ and 260$^{circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${AA}$ Cu seeded substrate was lower then that of 40 ${AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}. |
Key words:
CVD, Cu metauization, Seed layer, Sputtering |
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