Cystallization Mechanism of Bi<TEX>$_4$</TEX>Ge<TEX>$_3$</TEX>O<TEX>$_{12}$</TEX> Glass Through the Diffusion Controlled Growth

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J. Korean Ceram. Soc. > Volume 35(8); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(8): 890.

확산제어 성장을 통한 Bi$_4$Ge$_3$O$_{12}$유리의 결정화 메카니즘

이근우, 임영훈¹, 양용석

부산대학교 물리학과 유전체 물성연구소
¹세명대학교 전지전자공학부

Cystallization Mechanism of Bi$_4$Ge$_3$O$_{12}$ Glass Through the Diffusion Controlled Growth

ABSTRACT

The crystallization mechanism of {{{{ { { {Bi }_{4 }Ｇe }_{3 }O }_{12 } }}({{{{ { {Bi }_{2 }O }_{3) } }}:{{{{ { Ｇe O}_{2 } }}=2:3 glass has been studied by using the non-isoth-ermal modified Ozawa equation. XRD and DTA have been used for the measurement of structural and thermal change during the transition with the sample prepared by the twin roller melt quenching method. It is found there exists middle stage {{{{ { { {Bi }_{4 }Ｇe }_{3 }O }_{12 } }}({{{{ { {Bi }_{2 }O }_{3) } }}:{{{{ { Ｇe O}_{2 } }}=1:1) crystalline phase. The obtained activation en-ergy and Avrami parameter for BGO(1:1) crystalline phase. The obtained activation en-ergy and Averami parameter for BGO(1:1) transition are 4.47$pm$0.04 eV and near 1.5 respectively. These in-dicate the crystallization occurs through the 3 dimensional diffusion controlled growth

Key words: Crystallization, Activation energy, Averami parameter, Diffusion controlled growth