|
|
|
Journal of the Korean Ceramic Society 1995;32(6): 685. |
| SiC/C 경사기능재료(FGM)의 합성을 위한 SiC/C 분율 조절 |
| 김유택, 최준태1, 최종건1, 오근호1 |
경기대학교 재료공학과
1한양대학교 세라믹공학과 |
| The Control of SiC/C Ratio for the Synthesis of SiC/C Functionally Gradient Materials |
|
|
|
|
|
|
|
| ABSTRACT |
|
The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them. |
| Key words:
FGM, CVD, SiC/C, Composition gradient |
|
|
|
PDF Links
Full text via DOI 
Download Citation 
