Effects of Deposition Parameters on Sputter Deposition of Lead Titanate Thin Films

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J. Korean Ceram. Soc. > Volume 30(7); 1993 > Article

Journal of the Korean Ceramic Society 1993;30(7): 578.

스퍼터링 증착에 의한 $PbTiO_3$ 박막제조시 증착변수의 영향

김상섭, 강영민, 백성기

포항공과대학 재료·금속공학과

Effects of Deposition Parameters on Sputter Deposition of Lead Titanate Thin Films

ABSTRACT

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.