Crystallization of Passivation Glass for Electronic Devices

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J. Korean Ceram. Soc. > Volume 30(2); 1993 > Article

Journal of the Korean Ceramic Society 1993;30(2): 107.

전자장치용 Passivation 유리의 결정화에 관한 연구

손명모, 박희찬¹, 이헌수

대구공업전문대학 요업과
¹부산대학교 무기재료공학과

Crystallization of Passivation Glass for Electronic Devices

ABSTRACT

Zinc-Borosilicate(ZnO 65.0wt%, B2O3 21.5wt%, SiO2 9.0wt%, PbO or tiO2 4wt%) passivation glasses were studied using differential thermal analysis(DTA), scanning electron microscopy(SEM) observations, X-ray diffraction (XRD) patterns and measurement of thermal expansion coefficients. Passivation glasses containing 4wt% TiO2 and 4wt% PbO had crystallization temperature of 680~73$0^{circ}C$ and major crystalline phases were identified by X-ray diffraction as $alpha$-ZnO.B2O3 and $alpha$-5ZnO.2B2O3. As increasing firing temperature, the size of crystalline phases increased by observation of SEM. The thermal expansion coefficient of crystallized glass frits was smaller than that of unfired glass.