Low Temperature Deposition of TiN on the Steel Substrate by Plasma-Assisted CVD

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J. Korean Ceram. Soc. > Volume 30(2); 1993 > Article

Journal of the Korean Ceramic Society 1993;30(2): 148.

플라즈마 화학증착에 의한 강재위에 TiN의 저온증착

이정래, 김광호, 조성재¹

부산대학교 공과대학 무기재료공학과
¹한국표준과학연구원 소재평가센터

Low Temperature Deposition of TiN on the Steel Substrate by Plasma-Assisted CVD

ABSTRACT

TiN films were deposited onto high speed steel (SKH9) by plasma assisted chemical vapor deposition (PACVD) using a TiCl4/N2/H2/Ar gas mixture at around 50$0^{circ}C$. The effects of the deposition temperature, R.F. power and TiCl4 concentration on the deposition of TiN and the microhardness of TiN film were investigated. The crystallinity and the microhardness of TiN films were improved with increase of the deposition temperature. Optimum deposition temperature in this study was 50$0^{circ}C$, because a softening or phase transformation of the substrate occurred over 50$0^{circ}C$. A large increase of the film growth rate with a strong(200) preferred orientation was obtained by increasing R.F. power. Much chlorine content of about 10at.% was found in the deposited films and resulted in relatively low average microhardness of about 1, 500Kgf/$textrm{mm}^2$ compared with the theoretical value(~2, 000Kgf/$textrm{mm}^2$).