Relationship Between Voltage-time Characteristics and Microstructures of Tantalum Oxide Thin Films Prepared by Anodic Oxidation

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J. Korean Ceram. Soc. > Volume 28(6); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(6): 443.

양극 산화법으로 제조된 Tantalum Oxide 박막의 전압-시간 특성과 미세구조와의 연관성

정형진, 윤상옥¹, 이동헌

한국과학기술원 세라믹스부
¹강릉대학교 재료공학과

Relationship Between Voltage-time Characteristics and Microstructures of Tantalum Oxide Thin Films Prepared by Anodic Oxidation

ABSTRACT

Microstructures of tantalum oxide, anodic-oxidized in oxalic acid, are shown to be related to voltage-time characteristics during formation reaction. It is observed that a crystalline phase transformed from an amorphous phase is recrystallized in the presence of the high electric field within the film, and this recrystallized film has a very porous microstructure. From the results of the XRD, the nonlinearity observed after the first spark voltage is recognized to be due to the local crystallization.