The Study on the Denuded Zone Formation of Czochralski-grown Single Crystal Silicon Wafer (I)

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J. Korean Ceram. Soc. > Volume 28(6); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(6): 495.

Czochralski 법으로 성장시킨 단결정 Silicon Wafer에서의 표면 무결함층(Denuded Zone) 형성에 관한 연구(I)

김승현, 양두영¹, 김창은, 이홍림

연세대학교 공과대학 요업공학과
¹금성중앙연구소

The Study on the Denuded Zone Formation of Czochralski-grown Single Crystal Silicon Wafer (I)

ABSTRACT

This study is intended to make defect-free region, denuded zone at the silicon wafer surface for semiconductor device substrates. In this experiment, initial oxygen concentration of starting material CZ-grown silicon wafer, various heat treatment combinations, denuding ambient and the amounts of oxygen reduction were measured, and then denuded zone (DZ) formation and depth were investigated. In Low/High anneal (DZ formation could be achieved), the optimum temperature for Low anneal was 700$^{circ}C$∼750$^{circ}C$. In case of High anneal, with the time increased, DZ depth was increased at 1000$^{circ}C$, 1150$^{circ}C$ respectively, but on the contrary, DZ depth was decreased at low temperature 900$^{circ}C$. As well, out-diffusion time below 2 hours was unsuitable for effective Gettering technique even though the temperature was high, and DZ formation could be achieved when initial oxygen concentration was only above 14 ppm in silicon wafer.