The Effects of Deposition Temperature and RF Power on the Plasma Assisted Chemical Vapor Deposition of TiCN Films

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J. Korean Ceram. Soc. > Volume 26(3); 1989 > Article

Journal of the Korean Ceramic Society 1989;26(3): 323.

증착온도와 RF Power가 TiCN박막의 플라즈마 화학증착에 미치는 영향

김시범, 김광호, 김상호, 천성순

한국과학기술원 재료공학과

The Effects of Deposition Temperature and RF Power on the Plasma Assisted Chemical Vapor Deposition of TiCN Films

ABSTRACT

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{circ}C$ and maximum deposition rate was obtained at 485$^{circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$AA$ size. The microhardness of the deposited layer was 2,300Kg/$textrm{mm}^2$.