Effects of PECVD Process Parameters on the Characteristics of SiN Thin Film

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J. Korean Ceram. Soc. > Volume 24(2); 1987 > Article

Journal of the Korean Ceramic Society 1987;24(2): 170.

PECVD공정 조건의 질화실리콘 박막특성에 대한 효과

이종무, 이철진¹

인하대학교 공과대학 금속공학과
¹삼성반도체통신 주식회사

Effects of PECVD Process Parameters on the Characteristics of SiN Thin Film

ABSTRACT

Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.