Refractive Index Control of Silicon Oxynitride Thick Films on Core Layer of Silica Optical Waveguide

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doi:2002.39.6.594

J. Korean Ceram. Soc. > Volume 39(6); 2002 > Article

Journal of the Korean Ceramic Society 2002;39(6): 594.
doi: https://doi.org/10.4191/kcers.2002.39.6.594

실리카 광도파로의 Core층인 Silicon Oxynitride후박의 굴절률 제어

김용탁, 조성민, 윤석규, 서용곤¹, 임영민¹, 윤대호

성균관대학교 신소재공학과
¹전자부품연구원 광부품연구센터

Refractive Index Control of Silicon Oxynitride Thick Films on Core Layer of Silica Optical Waveguide

ABSTRACT

Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${mu}$m.

Key words: PECVD, Silicon oxynitride, Annealing, Silica optical waveguide