| Significantly enhanced charge transport in polysilicon by alleviating grain boundary scattering through interface control using reduced graphene oxide |
| Woo Hyun Nam1, Ju Hyoung Sun2, Hae Won Lee3, Na Won Kim3, Young Soo Lim2,3 |
1Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Jinju-si 52851, Korea
2Department of Materials System Engineering , Pukyong National University , Busan 48513 , Korea
3Department of Smart Green Technology Engineering , Pukyong National University , Busan 48513 , Republic of Korea |
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Received: August 11, 2021; Revised: September 30, 2021 Accepted: October 20, 2021. Published online: March 31, 2022. |
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| ABSTRACT |
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Here, we introduce interface control of polycrystalline silicon (poly-Si) using reduced graphene oxide (RGO) as a promising way to minimize the grain boundary scattering for the enhancement of the charge transport properties in poly-Si. In this experiment, Si powder was prepared by pulverizing an As-doped Si wafer using high-energy ball milling. The Si powder was coated with RGO, and the composite was consolidated by spark plasma sintering. The interface-controlled Si (Si–RGO) composite exhibited significantly enhanced charge transport properties compared with bulk poly-Si. The release of trapped electrons through interface control using RGO reduced the grain boundary barrier height and resulted in a negative temperature dependence of the mobility in the Si–RGO composite. Consequently, the mobility and carrier concentration of the Si–RGO composite were simultaneously enhanced through interface control using RGO. |
| Key words:
Si · Reduced graphene oxide · Charge transport · Grain boundary scattering |
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